Standards for the Characterization of 2 Endurance in Resistive Switching Devices

Abstract

Resistive switching (RS) devices are emerging 11 electronic components that could have applications in multiple 12 types of integrated circuits, including electronic memories, true 13 random number generators, radiofrequency switches, neuro- 14 morphic vision sensors, and artificial neural networks. The 15 main factor hindering the massive employment of RS devices in 16 commercial circuits is related to variability and reliability issues, 17 which are usually evaluated through switching endurance tests. 18 However, we note that most studies that claimed high 19 endurances >106 cycles were based on resistance versus cycle 20 plots that contain very few data points (in many cases even 21 <20), and which are collected in only one device. We 22 recommend not to use such a characterization method because 23 it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and 24 it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices 25 and in many cases has exaggerated their potential. This article proposes and describes a method for the correct 26 characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point 27 per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in 28 more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.