ListarFRBA - Artículos en Revistas por tema "Breakdown"
Mostrando ítems 1-5 de 5
-
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
(2021-06-14)The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for timedependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on ... -
Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition
(2021-02-21)In this paper, we extend the application of the Quasi-Static Memdiode model to the realistic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) intended for large dataset pattern recognition. ... -
On the Thermal Models for Resistive Random Access Memory Circuit Simulation
(2021-05-11)Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, ... -
Standards for the Characterization of 2 Endurance in Resistive Switching Devices
(2021-10-07)Resistive switching (RS) devices are emerging 11 electronic components that could have applications in multiple 12 types of integrated circuits, including electronic memories, true 13 random number generators, radiofrequency ... -
Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
(2021-04-11)Two-terminal metal/insulator/metal (MIM) memristors exhibiting threshold resistive switching (RS) can develop advanced key tasks in solid-state nano/ micro-electronic circuits, such as selectors and integrate-and-fire ...