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On the Thermal Models for Resistive Random Access Memory Circuit Simulation
(2021-05-11)
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications
related to non-volatile memories, ...
Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition
(2021-02-21)
In this paper, we extend the application of the Quasi-Static Memdiode model to the realistic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) intended for large dataset pattern recognition. ...
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
(2021-06-14)
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for timedependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS
nodes, as many attempts to decode it were not based on ...
Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
(2021-04-11)
Two-terminal metal/insulator/metal (MIM) memristors exhibiting threshold
resistive switching (RS) can develop advanced key tasks in solid-state nano/
micro-electronic circuits, such as selectors and integrate-and-fire ...
Standards for the Characterization of 2 Endurance in Resistive Switching Devices
(2021-10-07)
Resistive switching (RS) devices are emerging
11 electronic components that could have applications in multiple
12 types of integrated circuits, including electronic memories, true
13 random number generators, radiofrequency ...