Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

dc.creatorPalumbo, Felix
dc.date.accessioned2024-04-03T20:54:45Z
dc.date.available2024-04-03T20:54:45Z
dc.date.issued2021-06-14
dc.description.abstractThe breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for timedependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Knowhow of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2-SiOx bilayered MOS structurees_ES
dc.description.affiliationConsejo Nacional de Investigaciones Científicas y Técncas (CONICET), Godoy Cruz 2290, Buenos Aires, Argentina – C1425FABes_ES
dc.description.peerreviewedPeer Reviewedes_ES
dc.formatplaines_ES
dc.identifier.doi10.35848/1882- 0786/ac345d
dc.identifier.urihttp://hdl.handle.net/20.500.12272/10300
dc.language.isoenges_ES
dc.rightsopenAccesses_ES
dc.rights.useinvestigaciones_ES
dc.subjectBreakdownes_ES
dc.titleDecoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defectses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.type.versiondraftes_ES

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